Samsung says 256-layer NAND memory possible with double-stack tech

Seoul: Samsung Electronics is planning to use a double-stack technology to develop its next-generation V-NAND flash memory, industry officials said on Tuesday, as the world’s largest memory chip producer tries to further cement its leading position in the sector.

At its investors’ forum, Samsung revealed that it will apply “extreme two-stack” technology for its future NAND flash chip and that it is possible to develop a 256-layer device.