S Korean-Chinese research team develop next generation semiconductor material ‘TMD’

Seoul: The Institute for Basic Science (IBS) announced on November 16 that the Center for Multidimensional Carbon Materials’ Feng Ding group leader (Distinguished Professor of Materials Engineering at UNIST) research team found the core principle affecting the growth of large-area single-crystal dichalcogenides with Chinese research team and succeeded to produce core dichalcogenide materials such as tungsten disulfide (WS2) as a wafer-scale single-crystal TMDs.

The TMD (Transition Metal Dichalcogenide) is a semiconductor material made of chalcogen compounds such as sulfur (S), selenium (Se), and Tellurium (Te) and transition metals.